This NPN silicon planar epitaxial transistor is used as general purpose amplifier.
Version | NPN | |
Enclosure | TO-18 | |
max. operating temperature | 200 °C | |
max.voltage between collector and base Vcbo | 140 V | |
max.voltage between collector and emitter Vceo | 80 V | |
min. operating temperature | -65 °C | |
Assembly | THT | |
Rated current | 1 A | |
Transit frequency fTmin | 400 MHz | |
Power dissipation | 0.5 W | |
Collector current | 1 A | |
Max DC amplification | 300 mA | |
Min DC gain | 100 mA |
Country of origin | IN |
Customs tariff number | 85412900 |
Original Packaging | Bulk with 1,000 pieces |
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |
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