SMBT3904E6327 | Infineon Technologies
Bipolar junction transistor, NPN, 200 mA, 40 V, SMD, SOT-23, SMBT3904E6327
Discontinued
Bipolar transistor, SMBT3904E6327, Infineon Technologies
Features
- Low current gain
- Low collector-emitter saturation voltage
- Pb-free and RoHs-compliant
Version | NPN | |
Enclosure | SOT-23 | |
max. operating temperature | 150 °C | |
max.voltage between collector and base Vcbo | 60 V | |
max.voltage between collector and emitter Vceo | 40 V | |
min. operating temperature | -65 °C | |
Assembly | SMD | |
Rated current | 200 mA | |
Saturation voltage | 300 mV | |
Transit frequency fTmin | 300 MHz | |
Power dissipation | 0.33 W | |
Collector current | 200 mA | |
Max DC amplification | 300 mA | |
Min DC gain | 100 mA |
Country of origin | CN |
Customs tariff number | 85412900 |
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |