BDW83D | COMSET Semiconductors

Bipolar junction transistor, NPN, 15 A, 120 V, THT, TO-3PN, BDW83D

Order No.: 15S5368
EAN: 4099879028563
MPN:
BDW83D
COMSET Semiconductors
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As a private customer, you can buy this item as soon as we have it back in stock.

NPN power transistor, BDW83D, COMSET

This silicon epitaxial-base NPN power monolithic Darlington transistor is mounted in Jedec TO3PN plastic package. It is intended for use in power linear and switching applications.

Features

  • Compliance to RoHS
Technical specifications
Version NPN
Enclosure TO-3PN
max. operating temperature 150 °C
max.voltage between collector and base Vcbo 120 V
max.voltage between collector and emitter Vceo 120 V
min. operating temperature -65 °C
Assembly THT
Rated current 15 A
Saturation voltage 2.5 V
Transit frequency fTmin 1 MHz
Power dissipation 150 W
Collector current 15 A
Logistics
Country of origin CN
Customs tariff number 85412900
Original Packaging Bar with 25 pieces
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free Yes
Variations
Power dissipation
Version
Collector current
Saturation voltage
Assembly
min. operating temperature
max. operating temperature
Rated current
Enclosure
1 item in 2 variations
*incl. VAT plus shipping costs
Item description
Total
Price list
Power dissipation
Version
Collector current
Saturation voltage
Assembly
min. operating temperature
max. operating temperature
Rated current
Enclosure