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TVS diode, 600 W, PTVS8V0P1UTP,115, 8 V

  • Housing type: SOD128 
  • Version: unidirectional 
  • Design: SMD 
  • min. breakdown voltage: 8.89 V
  • max. breakdown voltage: 9.83 V
 
Order No. 26 S 124
Manufacturer No. PTVS8V0P1UTP,115
piece
Total

€ 3.57
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scale from 10 from 100 from 1000
Price* per piece € 0.357 € 0.2261 € 0.1904
product.detail.add.UNDEFINED
AEC-Q101 qualifiziert, Ausführung: unidirektional, Bauform: SMD, Impuls-Spitzenverlustleistung: 600 W, Nennspannung: 8,0 V, Durchbruchsspannung (min.): 8,89 V, Durchbruchsspannung (max.): 9,83 V, Umgebungstemperatur (min.): -55 °C, Umgebungstemperatur (max.): 185 °C, Gehäuse: SOD128, Typ: PTVS8V0P1UTP,115, Hersteller: NXP
Pulse power loss 600 W
Type PTVS8V0P1UTP,115
Rated blocking voltage 8 V
Housing type SOD128
Version unidirectional
Design SMD
min. breakdown voltage 8.89 V
max. breakdown voltage 9.83 V
min. ambient temperature -55 °C
max. ambient temperature 185 °C
Unique characteristic AEC-Q101 qualified
The above illustration may deviate
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