2N6109G | onsemi
Bipolar junction transistor, PNP, -7 A, -50 V, THT, TO-220, 2N6109G
Vom Hersteller nicht mehr lieferbar
Unit Price (€ / pc.)
0.7021 € *
Available: 520 pcs.
Leadtime: On Request **
Total Price:
7.02 € *
Price list
Quantity
Price per unit*
10 pcs.
0.7021 €
50 pcs.
0.6188 €
*incl. VAT plus shipping costs
**Subject to prior sale
Power transistor, 2N6109G, onsemi
This complementary silicon plastic power transistor is designed for use in general-purpose amplifier and switching applications.
Features
- High current gain bandwidth product
- RoHS Compliant
Technical specifications
| Version | PNP | |
| Enclosure | TO-220 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | -60 V | |
| max.voltage between collector and emitter Vceo | -50 V | |
| min. operating temperature | -65 °C | |
| Assembly | THT | |
| Saturation voltage | -3.5 V | |
| Transit frequency fTmin | 10 MHz | |
| Power dissipation | 40 W | |
| Collector current | -7 A | |
| Max DC amplification | 150 mA | |
| Min DC gain | 30 mA |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Stange mit 50 Stück |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |