IXBN42N170A | Littelfuse
IGBT, IXBN42N170AAH
Order No.: 74P0733
EAN: 4099891775988
MPN:
IXBN42N170A
Unit Price (€ / pc.)
40.0316 € *
Available: 0 pcs.
Leadtime: 47 Weeks **
IGBT, IXBN42N170A, Littelfuse
BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device.
Features
- High power density
- High blocking voltage
- Low conduction losses
- MOS gate turn on for drive simplicity
- Simpler system design
Applications
- Radar transmitter power supplies
- Radar pulse modulators
- Capacitor discharge circuits
- High voltage power supplies
- AC switches
- HV circuit breakers
- Pulser circuits
Technical specifications
| Version | single | |
| Enclosure | SOT-227 | |
| max. Voltage | 1700 V | |
| Max. current | 38 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | screw mounting | |
| Saturation voltage | 6 V | |
| Switching loss b. switch off Eoff typ. | 0.43 J | |
| Switching loss at switch-on Eon typ. | 5.4 J | |
| Power dissipation | 313 W |
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Logistics
| Country of origin | KR |
| Customs tariff number | 85411000 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
