SMBT2907AE6327 | Infineon Technologies
Bipolar junction transistor, PNP, 600 mA, 60 V, SMD, SOT-23, SMBT2907AE6327
Discontinued
Unit Price (€ / pc.)
0.1761 € *
Available: 3,000 pcs.
Leadtime: On Request **
Total Price:
4.40 € *
Price list
Quantity
Price per unit*
25 pcs.
0.1761 €
125 pcs.
0.1309 €
500 pcs.
0.1047 €
3000 pcs.
0.0857 €
6000 pcs.
0.0774 €
*incl. VAT plus shipping costs
**Subject to prior sale
Bipolar transistor, SMBT2907AE6327, Infineon Technologies
Features
- Low current gain
- Low collector-emitter saturation voltage
- Pb-free and RoHs-compliant
Technical specifications
| Version | PNP | |
| Enclosure | SOT-23 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 60 V | |
| max.voltage between collector and emitter Vceo | 60 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Rated current | 600 mA | |
| Saturation voltage | 400 mV | |
| Transit frequency fTmin | 200 MHz | |
| Power dissipation | 0.33 W | |
| Collector current | 600 mA | |
| Max DC amplification | 300 mA | |
| Min DC gain | 100 mA |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| MSL | MSL 1 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
