BFR93AWH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 90 mA, 12 V, SMD, SOT-323, BFR93AWH6327XTSA1
Unit Price (€ / pc.)
0.3070 € *
Available: 2,480 pcs.
Leadtime: 4 Weeks **
Total Price:
6.14 € *
Price list
Quantity
Price per unit*
20 pcs.
0.3070 €
100 pcs.
0.2273 €
500 pcs.
0.1809 €
3000 pcs.
0.1488 €
6000 pcs.
0.1333 €
*incl. VAT plus shipping costs
**Subject to prior sale
Bipolar transistor, BFR93AWH6327XTSA1, Infineon Technologies
The BFR93AWH6327XTSA1 is a low noise silicon bipolar RF transistor that is used for low distortion amplifiers.
Features
- Low current gain
- High collector-emitter breakdown voltage
- Low noise
- Pb-free and RoHs-compliant
Applications
- For low distortion broadband amplifiers
- For oscilators
Technical specifications
Version | NPN | |
Enclosure | SOT-323 | |
max. operating temperature | 150 °C | |
max.voltage between collector and base Vcbo | 20 V | |
max.voltage between collector and emitter Vceo | 12 V | |
min. operating temperature | -55 °C | |
Assembly | SMD | |
Transit frequency fTmin | 4.5 GHz | |
Power dissipation | 0.3 W | |
Collector current | 90 mA | |
Max DC amplification | 140 mA | |
Min DC gain | 70 mA |
Download
Logistics
Country of origin | CN |
Customs tariff number | 85412900 |
Original Packaging | Reel with 72,000 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |