DMN65D8L-7 | Diodes

Diodes N channel MOSFET, 60 V, 310 mA, TO-236, DMN65D8L-7

Order No.: 33S2414
EAN: 4099879034441
MPN:
DMN65D8L-7
Diodes
default L
Image may differ
Unit Price (€ / pc.)
0.0274 € *
Available: 0 pcs.
Leadtime: 14 Weeks **
Total Price:
0.03 € *
*incl. VAT plus shipping costs
**Subject to prior sale
3000 pcs.
0.0274 €

MOSFET, DMN65D8L-7, Diodes

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
Technical specifications
Version N channel
drain-source on resistance RDS (on) max @VGS=10V 3 Ω
Gate Charge Qg @10V (nC) 8.7x10<sup>-10</sup> C
Enclosure TO-236
max. Voltage 60 V
Max. current 310 mA
max. operating temperature 150 °C
min. operating temperature -55 °C
Assembly SMD
Logistics
Country of origin CN
Customs tariff number 85412900
Original Packaging Reel with 3,000 pieces
Compliance
RoHS conform Yes
SVHC free Yes
Variations
Version
Assembly
max. Voltage
Max. current
min. operating temperature
max. operating temperature
drain-source on resistance RDS (on) max @VGS=10V
Enclosure
1 item in 1 more variant
*incl. VAT plus shipping costs
Item description
Total
Price list
Version
Assembly
max. Voltage
Max. current
min. operating temperature
max. operating temperature
drain-source on resistance RDS (on) max @VGS=10V
Enclosure