1N5820 | onsemi
Schottky rectifier diode 1N5820
No longer available from manufacturer
Unit Price (€ / pc.)
0.2404 € *
Available: 1,446 pcs.
Leadtime: On Request **
Schottky diode, 1N5820, onsemi
This axial lead rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as a rectifier in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
- Extremely low forward voltage
- Lower power losses, high efficiency
- Low stored charge, majority carrier conduction
Technical specifications
| Number of diodes | 1 | |
| Version | schottky rectifier diode | |
| Design | axial | |
| Forward Current | 3 A | |
| Enclosure | DO-201AD | |
| max. operating temperature | 125 °C | |
| min. operating temperature | -65 °C | |
| Assembly | THT | |
| Voltage V RRM (peak reverse voltage) | 20 V | |
| Junction temperature (max.) | 125 °C | |
| Junction temperature (min.) | -65 °C | |
| Surge blocking voltage V RMS | 20 V |
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Logistics
| Country of origin | QU |
| Customs tariff number | 85411000 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
