IRF520NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 9.7 A, TO-220, IRF520NPBF
MOSFET, IRF520NPBF, Infineon Technologies
The IRF520NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 200 mΩ | |
Gate Charge Qg @10V (nC) | 2.5x10<sup>-8</sup> C | |
Enclosure | TO-220 | |
max. Voltage | 100 V | |
Max. current | 9.7 A | |
max. operating temperature | 175 °C | |
min. operating temperature | -55 °C | |
Assembly | THT | |
Power loss | 48 W |
Country of origin | CN |
Customs tariff number | 85412900 |
Original Packaging | Bar with 50 pieces |
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |