IRF1010NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 85 A, TO-220, IRF1010NPBF
MOSFET, IRF1010NPBF, Infineon Technologies
The IRF1010NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Avalanche rated
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 11 mΩ | |
Gate Charge Qg @10V (nC) | 1.2x10<sup>-7</sup> C | |
Enclosure | TO-220 | |
max. Voltage | 55 V | |
Max. current | 85 A | |
max. operating temperature | 175 °C | |
min. operating temperature | -55 °C | |
Assembly | THT | |
Power loss | 130 W |
Country of origin | CN |
Customs tariff number | 85412900 |
Original Packaging | Bar with 1 piece |
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |