IPP80P03P4L04AKSA1 | Infineon Technologies

Name: Infineon Technologies P-channel OptiMOS power MOSFET, -30 V, -80 A, PG-TO220-3, IPP80P03P4L04AKSA1
Brand: Infineon Technologies
SKU: 88S9683
Price: 1.68 EUR
Availability: InStock

Infineon Technologies P-channel OptiMOS power MOSFET, -30 V, -80 A, PG-TO220-3, IPP80P03P4L04AKSA1

Order No.: 88S9683

EAN: 4099879035448

MPN:

IPP80P03P4L04AKSA1

SP000396390

Series: IPP

Image may differ

Key Specification:

Version P-channel

max. Voltage -30 V

Max. current -80 A

drain-source on resistance RDS (on) max @VGS=10V 4.4 mΩ

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Discontinued

Unit Price (€ / pc.)

1.6779 € *

Available: 480 pcs.

Leadtime: On Request **

Total Price:

1.68 € *

Price list

Quantity

Price per unit*

1 pcs.

1.6779 €

50 pcs.

1.4280 €

100 pcs.

1.3804 €

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, IPP80P03P4L04AKSA1, Infineon Technologies

Features

P-channel
Enhancement mode
Logic level
Avalanche rated

Applications

High-Side MOSFET for motor bridges
Half-bridges
3-phase-motors
H-bridges

Technical specifications

	Version	P-channel
	drain-source on resistance RDS (on) max @VGS=10V	4.4 mΩ
	Gate Charge Qg @10V (nC)	1.25x10<sup>-7</sup> C
	Enclosure	PG-TO220-3
	max. Voltage	-30 V
	Max. current	-80 A
	max. operating temperature	175 °C
	min. operating temperature	-55 °C
	Assembly	THT
	Power loss	137 W