IPB083N10N3GATMA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOS3 power transistor, 100 V, 80 A, PG-TO263-3, IPB083N10N3GATMA1
Brand: Infineon Technologies
SKU: 88S8983
Price: 1.70 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOS3 power transistor, 100 V, 80 A, PG-TO263-3, IPB083N10N3GATMA1

Order No.: 88S8983

EAN: 4099879035202

MPN:

IPB083N10N3GATMA1

SP000458812

Series: IPB

Image may differ

Key Specification:

Version N channel

max. Voltage 100 V

Max. current 80 A

drain-source on resistance RDS (on) max @VGS=10V 8.3 mΩ

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Unit Price (€ / pc.)

1.7017 € *

Available: 0 pcs.

Leadtime: 26 Weeks **

Add to Cart

Total Price:

1.70 € *

Price list

Quantity

Price per unit*

3 pcs.

1.7017 €

15 pcs.

1.4756 €

75 pcs.

1.3209 €

400 pcs.

1.1900 €

1000 pcs.

1.0829 €

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, IPB083N10N3GATMA1, Infineon Technologies

Features

N-channel
Excellent gate charge
Very low on-resistance
Ideal for high-frequency switching and synchronous rectification

Applications

Synchronous rectification for AC-DC SMPS
Motor control for 48 V–80 V systems
Isolated DC-DC converters
Or-ing switches and circuit breakers in 48 V systems
Class D audio amplifiers
Uninterruptible power supplies (UPS)

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	8.3 mΩ
	Gate Charge Qg @10V (nC)	4.2x10<sup>-8</sup> C
	Enclosure	PG-TO263-3
	max. Voltage	100 V
	Max. current	80 A
	max. operating temperature	175 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	Power loss	125 W