BSC016N03LSGATMA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOS3 power MOSFET, 30 V, 100 A, PG-TDSON-8, BSC016N03LSGATMA1
Brand: Infineon Technologies
SKU: 88S7263
Price: 0.93 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOS3 power MOSFET, 30 V, 100 A, PG-TDSON-8, BSC016N03LSGATMA1

Order No.: 88S7263

EAN: 4099879034922

MPN:

BSC016N03LSGATMA1

SP000237663

Series: BSC

Image may differ

Key Specification:

Version N channel

max. Voltage 30 V

Max. current 100 A

drain-source on resistance RDS (on) max @VGS=10V 1.6 mΩ

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.9282 € *

Available: 0 pcs.

Leadtime: 22 Weeks **

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Total Price:

0.93 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, BSC016N03LSGATMA1, Infineon Technologies

Features

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
N-channel
Very low on-resistance

Applications

Onboard charger
Notebook
Mainboard
DC-DC
VRD/VRM
Motor control
LED

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	1.6 mΩ
	Gate Charge Qg @10V (nC)	4.7x10<sup>-8</sup> C
	Enclosure	PG-TDSON-8
	max. Voltage	30 V
	Max. current	100 A
	max. operating temperature	150 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	Power loss	125 W