BFP640ESDH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 50 mA, 4.1 V, SMD, SOT-343, BFP640ESDH6327XTSA1
Unit Price (€ / pc.)
0.4165 € *
Available: 0 pcs.
Leadtime: 4 Weeks **
Bipolar transistor, BFP640ESDH6327XTSA1, Infineon Technologies
The BFP640ESDH6327XTSA1 is a RF bipolar transistor based on SiGe:C technology. Its ESD structure, high RF gain and low noise figure characteristics make the device suitable for a wide range of wireless applications.
Features
- High gain
- High ESD robustness
- Low noise
- Pb-free and RoHs-compliant
Applications
- Low noise amplifiers (LNAs) in GNSS receivers
- LNAs in satellite radio (SDARs, DAB) receivers
- LNAs in multimedia applications such as CATV and FM radio
Technical specifications
| Version | NPN | |
| Enclosure | SOT-343 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 4.8 V | |
| max.voltage between collector and emitter Vceo | 4.1 V | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Transit frequency fTmin | 45 GHz | |
| Power dissipation | 0.2 W | |
| Collector current | 50 mA | |
| Max DC amplification | 270 mA | |
| Min DC gain | 110 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 1 piece |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
