BC847CE6327 | Infineon Technologies
Bipolar junction transistor, NPN, 100 mA, 45 V, SMD, SOT-23, BC847CE6327
Discontinued
Unit Price (€ / pc.)
0.0976 € *
Available: 12 pcs.
Leadtime: On Request **
Total Price:
0.10 € *
Price list
Quantity
Price per unit*
1 pcs.
0.0976 €
10 pcs.
0.0702 €
100 pcs.
0.0607 €
500 pcs.
0.0512 €
*incl. VAT plus shipping costs
**Subject to prior sale
Bipolar transistor, BC847CE6327, Infineon Technologies
Features
- High current gain
- Low collector-emitter saturation voltage
- Low noise
- Pb-free and RoHs-compliant
Applications
- For AF input stages and driver applications
Technical specifications
Version | NPN | |
Enclosure | SOT-23 | |
max. operating temperature | 150 °C | |
max.voltage between collector and base Vcbo | 50 V | |
max.voltage between collector and emitter Vceo | 45 V | |
min. operating temperature | -65 °C | |
Assembly | SMD | |
Rated current | 100 mA | |
Saturation voltage | 200 mV | |
Transit frequency fTmin | 250 MHz | |
Power dissipation | 0.33 W | |
Collector current | 100 mA | |
Max DC amplification | 800 mA | |
Min DC gain | 420 mA |
Download
Logistics
Country of origin | CN |
Customs tariff number | 85412900 |
Original Packaging | Reel with 3,000 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |