2N3019-T | COMSET Semiconductors
Bipolar junction transistor, NPN, 1 A, 80 V, THT, TO-39, 2N3019-T
NPN transistor, 2N3019-T, COMSET
The 2N3019-T NPN transistor is mounted in TO-39 metal case. It is intended for high-current, high-frequency amplifier applications.
Features
- High gain and low saturation voltages
- Compliance to RoHS
Version | NPN | |
Enclosure | TO-39 | |
max. operating temperature | 200 °C | |
max.voltage between collector and base Vcbo | 140 V | |
max.voltage between collector and emitter Vceo | 80 V | |
min. operating temperature | -65 °C | |
Assembly | THT | |
Rated current | 1 A | |
Saturation voltage | 200 mV | |
Transit frequency fTmin | 100 MHz | |
Power dissipation | 0.8 W | |
Collector current | 1 A | |
Max DC amplification | 300 mA | |
Min DC gain | 100 mA |
Country of origin | CN |
Customs tariff number | 85412900 |
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |