2N2647-T | COMSET Semiconductors
Bipolar junction transistor, NPN, 45 V, THT, TO-18, 2N2647-T
Unijunction transistor, 2N2647-T, COMSET
The 2N2647-T has a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. It is intended for applications where a low emitter leakage current and a low peak point emitter current are required and also for triggering high power SCR’s.
Features
- Compliance to RoHS
Version | NPN | |
Enclosure | TO-18 | |
max. operating temperature | 150 °C | |
max.voltage between collector and base Vcbo | 45 V | |
max.voltage between collector and emitter Vceo | 45 V | |
min. operating temperature | -65 °C | |
Assembly | THT | |
Rated current | 30 mA | |
Transit frequency fTmin | 40 MHz | |
Power dissipation | 0.3 W |
Country of origin | BY |
Customs tariff number | 85412900 |
Original Packaging | Bulk with 500 pieces |
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |