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TVS diode
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TVS diode, 600 W, PTVS10VP1UP,115, 10 V

  • Housing type: SOD128 
  • Version: unidirectional 
  • Design: SMD 
  • min. breakdown voltage: 11.1 V
  • max. breakdown voltage: 12.3 V
 
Order No. 26 S 100
Manufacturer No. PTVS10VP1UP,115
piece
Total

€ 3.81
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scale from 10 from 100 from 1000 from 3000
Price* per piece € 0.3808 € 0.238 € 0.2023 € 0.1785
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Product information
AEC-Q101 qualifiziert, Ausführung: unidirektional, Bauform: SMD, Impuls-Spitzenverlustleistung: 600 W, Nennspannung: 10 V, Durchbruchsspannung (min.): 11,1 V, Durchbruchsspannung (max.): 12,3 V, Umgebungstemperatur (min.): -55 °C, Umgebungstemperatur (max.): 150 °C, Gehäuse: SOD128, Typ: PTVS10VP1UP,115, Hersteller: NXP
Pulse power loss 600 W
Type PTVS10VP1UP,115
Rated blocking voltage 10 V
Housing type SOD128
Version unidirectional
Design SMD
min. breakdown voltage 11.1 V
max. breakdown voltage 12.3 V
min. ambient temperature -55 °C
max. ambient temperature 150 °C
Unique characteristic AEC-Q101 qualified
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