BD137G | onsemi
Bipolar junction transistor, NPN, 1.5 A, 60 V, THT, TO-225AA, BD137G
Unit Price (€ / pc.)
0.4522 € *
Available: 0 pcs.
Leadtime: 12 Weeks **
NPN transistor, BD137G, onsemi
This NPN power bipolar junction transistor is designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Features
- Halogen free
- RoHS Compliant
Technical specifications
| Version | NPN | |
| Enclosure | TO-225AA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 60 V | |
| max.voltage between collector and emitter Vceo | 60 V | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Saturation voltage | 500 mV | |
| Power dissipation | 12.5 W | |
| Collector current | 1.5 A | |
| Max DC amplification | 250 mA | |
| Min DC gain | 40 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Bulk with 500 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |
