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Schottky diode, 20 V, 1 A, PMEG2010EV,115

  • Housing type: SOT666 
  • Design: SMD 
  • min. ambient temperature: -65 °C
  • max. ambient temperature: 125 °C
  • Unique characteristic: with low forward bias, 
 
Order No. 10 S 9121
Manufacturer No. PMEG2010EV,115
piece
Total

€ 17.85
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product.detail.add.UNDEFINED
Maximum Efficiency General Application (MEGA) Schottky Barrier Rectifiers, mit geringer Vorwärtsspannung, Strom IF: 1,0 A, Spannung VR: 20 V, Umgebungstemperatur (min.): -65 °C, Umgebungstemperatur (max.): 125 °C, Bauform: SMD, Gehäuse: SOT666, Typ: PMEG2010EV,115, Hersteller: NXP
Surge peak blocking voltage 20 V
Rated current 1 A
Type PMEG2010EV,115
Housing type SOT666
Design SMD
min. ambient temperature -65 °C
max. ambient temperature 125 °C
Unique characteristic with low forward bias,
Application Maximum Efficiency General Application (MEGA) Schottky Barrier Rectifiers
The above illustration may deviate