SIR826ADP-T1-GE3 | Vishay
Vishay N channel TrenchFET power MOSFET, 80 V, 60 A, SOIC-8, SIR826ADP-T1-GE3
Unit Price (€ / pc.)
2.2848 € *
Available: 0 pcs.
Next delivery: 3,000 pcs. on 2024-11-22
Leadtime: On Request **
Total Price:
2.28 € *
Price list
Quantity
Price per unit*
1 pcs.
2.2848 €
25 pcs.
1.9516 €
100 pcs.
1.7850 €
250 pcs.
1.7017 €
1000 pcs.
1.5589 €
*incl. VAT plus shipping costs
**Subject to prior sale
N-channel MOSFETs, type Vishay Siliconix Si.
Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiR826ADP, 80 V, 5.5 mohm, 60 A, 25 nC, PowerPAK SO-8
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 5.5 mΩ | |
| Gate Charge Qg @10V (nC) | 2.5x10<sup>-8</sup> C | |
| Enclosure | SOIC-8 | |
| max. Voltage | 80 V | |
| Max. current | 60 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Power loss | 104 W |
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Logistics
| Country of origin | TW |
| Customs tariff number | 85412900 |
| MSL | MSL 1 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
