FDB0190N807L | onsemi
Onsemi N channel power trench MOSFET, 80 V, 270 A, D2PAK-7L, FDB0190N807L
Unit Price (€ / pc.)
8.2110 € *
Available: 0 pcs.
Next delivery: 800 pcs. on 2024-07-19
Leadtime: 52 Weeks **
Total Price:
8.21 € *
Price list
Quantity
Price per unit*
1 pcs.
8.2110 €
10 pcs.
5.8667 €
100 pcs.
5.0218 €
500 pcs.
4.3554 €
800 pcs.
3.9627 €
*incl. VAT plus shipping costs
**Subject to prior sale
N-Channel MOSFET, FDB0190N807L, ON Semiconductor
Features
- Max RDSon = 1,7 mOhm @ VHGS= 10V, ID= 34A
- Fast Switching; Low Gate Charge,
- High Power and Current Handling Capability
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 1.7 mΩ | |
Gate Charge Qg @10V (nC) | 1.78x10<sup>-7</sup> C | |
Enclosure | D2PAK-7L | |
max. Voltage | 80 V | |
Max. current | 270 A | |
max. operating temperature | 175 °C | |
min. operating temperature | -55 °C | |
Assembly | SMD | |
Power loss | 250 W |
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Logistics
Country of origin | CN |
Customs tariff number | 85412900 |
MSL | MSL 3 |
Original Packaging | Reel with 800 pieces |
Compliance
RoHS conform | Yes |
SVHC free | Yes |