IRF520NSTRLPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 9.7 A, TO-252-3, IRF520NSTRLPBF
Unit Price (€ / pc.)
0.6307 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, IRF520NSTRLPBF, Infineon Technologies
The IRF520NSTRLPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
Features
- Advanced process technology
- Surface mounted
- Fast switching
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 200 mΩ | |
| Gate Charge Qg @10V (nC) | 2.5x10<sup>-8</sup> C | |
| Enclosure | TO-252-3 | |
| max. Voltage | 100 V | |
| Max. current | 9.7 A | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Power loss | 48 W |
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Logistics
| Customs tariff number | 85412900 |
| MSL | MSL 1 |
| Original Packaging | Reel with 800 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
