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The BTS612N1E3128ABUMA1 is a vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in smart SIPMOS technology.
Features
Applications
Number of channels | 2 | |
Version | N channel | |
drain-source on resistance RDS (on) @ Tj = 25°C max | 0.2 Ω | |
Enclosure | TO-263 | |
max. Voltage | 34 V | |
Max. current | 1.7 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -40 °C | |
Assembly | SMD |
Customs tariff number | 85412900 |
Original Packaging | Reel with 1,000 pieces |
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |
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