BTS452RATMA1 | Infineon Technologies
INFINEON SMD MOSFET NFET 52V 1,8A 270mΩ 150°C TO-252 BTS452R ND
Unit Price (€ / pc.)
2.6775 € *
Available: 5,449 pcs.
Leadtime: 48 Weeks **
Total Price:
2.68 € *
Price list
Quantity
Price per unit*
1 pcs.
2.6775 €
25 pcs.
2.2848 €
100 pcs.
2.1063 €
250 pcs.
1.9992 €
1000 pcs.
1.8326 €
*incl. VAT plus shipping costs
**Subject to prior sale
High side switch, BTS452RATMA1, Infineon Technologies
The BTS452RATMA1 is a vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in smart SIPMOS technology.
Features
- Overload protection
- Current limitation
- Short circuit protection
- Overvoltage protection (including load dump)
- Reverse battery protection with external resistor
- ESD protected
Applications
- Compatible power switch for 12 V and 24 V DC grounded loads
- All types of resistive, inductive and capacitive loads
- Replaces electromechanical relays, fuses and discrete circuits
Technical specifications
| Number of channels | 1 | |
| Version | N channel | |
| drain-source on resistance RDS (on) @ Tj = 25°C max | 150 mΩ | |
| Enclosure | TO-252 | |
| max. Voltage | 52 V | |
| Max. current | 2.2 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -40 °C | |
| Assembly | SMD |
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Logistics
| Country of origin | AT |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 1 piece |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
