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N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Features
Applications
Version | N channel | |
Enclosure | PG-DSO-8 | |
max. Voltage | 34 V | |
max. operating temperature | 150 °C | |
min. operating temperature | -40 °C | |
Assembly | SMD |
Country of origin | MY |
Original Packaging | Reel with 2,500 pieces |
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |
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