BC858CE6327 | Infineon Technologies

Name: Bipolar junction transistor, PNP, 100 mA, 30 V, SMD, SOT-23, BC858CE6327
Brand: Infineon Technologies
SKU: 12S6289
Price: 0.37 EUR
Availability: InStock

Bipolar junction transistor, PNP, 100 mA, 30 V, SMD, SOT-23, BC858CE6327

Order No.: 12S6289

MPN:

BC858CE6327

Series: BC8x

EAN: 4099879027382

Images may differ

Key Specification:

Assembly SMD

Enclosure SOT-23

Version PNP

Saturation voltage 650 mV

Collector current 100 mA

Technical specifications Download Datasheet

Discontinued

Unit Price (€ / pc.)

0.3689 € *

Available: 2,942 pcs.

Leadtime: On Request **

Total Price:

3.69 € *

Quantity

Price per unit*

10 pcs.

0.3689 €

50 pcs.

0.2487 €

250 pcs.

0.0774 €

1250 pcs.

0.0583 €

4000 pcs.

0.0476 €

10000 pcs.

0.0417 €

*incl. VAT plus shipping costs

**Subject to prior sale

Add to comparison list Print

Description

Bipolar transistor, BC858CE6327, Infineon Technologies

Features

High current gain
Low collector-emitter saturation voltage
Low noise
Pb-free and RoHs-compliant

Applications

For AF input stages and driver applications

Technical specifications

	Version	PNP
	Enclosure	SOT-23
	max. operating temperature	150 °C
	max.voltage between collector and base Vcbo	30 V
	max.voltage between collector and emitter Vceo	30 V
	min. operating temperature	-65 °C
	Assembly	SMD
	Rated current	100 mA
	Saturation voltage	650 mV
	Transit frequency fTmin	250 MHz
	Power dissipation	0.33 W
	Collector current	100 mA
	Max DC amplification	800 mA
	Min DC gain	420 mA