BC848CE6327HTSA1 | Infineon Technologies

Name: Bipolar junction transistor, NPN, 100 mA, 30 V, SMD, SOT-23, BC848CE6327HTSA1
Brand: Infineon Technologies
SKU: 12S6273
Price: 0.15 EUR
Availability: InStock

Bipolar junction transistor, NPN, 100 mA, 30 V, SMD, SOT-23, BC848CE6327HTSA1

Order No.: 12S6273

MPN:

BC848CE6327HTSA1

Series: BC848

EAN: 4099879027283

Images may differ

Key Specification:

Assembly SMD

Enclosure SOT-23

Version NPN

Saturation voltage 600 mV

Collector current 100 mA

Show 2 variants

Technical specifications Download Datasheet

Discontinued

Unit Price (€ / pc.)

0.1476 € *

Available: 75 pcs.

Leadtime: On Request **

Total Price:

3.69 € *

Quantity

Price per unit*

25 pcs.

0.1476 €

125 pcs.

0.1095 €

500 pcs.

0.0869 €

3000 pcs.

0.0714 €

6000 pcs.

0.0643 €

*incl. VAT plus shipping costs

**Subject to prior sale

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Description

Bipolar transistor, BC848CE6327HTSA1, Infineon Technologies

Features

High current gain
Low collector-emitter saturation voltage
Low noise
Pb-free and RoHs-compliant

Applications

For AF input stages and driver applications

Technical specifications

	Version	NPN
	Enclosure	SOT-23
	max. operating temperature	150 °C
	max.voltage between collector and base Vcbo	30 V
	max.voltage between collector and emitter Vceo	30 V
	min. operating temperature	-65 °C
	Assembly	SMD
	Rated current	100 mA
	Saturation voltage	600 mV
	Transit frequency fTmin	250 MHz
	Power dissipation	0.33 W
	Collector current	100 mA
	Max DC amplification	800 mA
	Min DC gain	420 mA