ZXMN10A07FTA | Diodes
Diodes N channel MOSFET, 100 V, 700 mA, TO-236, ZXMN10A07FTA
As a private customer, you can buy this item as soon as we have it back in stock.
MOSFET, ZXMN10A07FTA, Diodes
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
- Low On-Resistance
- Fast switching speed
- Low threshold
- Low gate drive
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 700 mΩ | |
| Gate Charge Qg @10V (nC) | 2.9x10<sup>-9</sup> C | |
| Enclosure | TO-236 | |
| max. Voltage | 100 V | |
| Max. current | 700 mA | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Power loss | 809 mW |
Download
Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| RoHS conform | Yes |
| SVHC free | Yes |
