IPT004N03LATMA1 | Infineon Technologies
Infineon Technologies N channel OptiMOSP2 power transistor, 30 V, 300 A, HSOF, IPT004N03LATMA1
Unit Price (€ / pc.)
2.9393 € *
Available: 0 pcs.
Leadtime: 22 Weeks **
MOSFET, IPT004N03LATMA1, Infineon Technologies
Features
- P-channel
- Enhancement mode
- Logic level
- Avalanche rated
Applications
- Forklift
- Light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car
- Point-of-load (POL)
- Telecom
- eFuse
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 0.4 Ω | |
| drain-source on resistance RDS (on) max @VGS=4,5V | 0.5 mΩ | |
| Gate Charge Qg @10V (nC) | 2.52x10<sup>-7</sup> C | |
| Enclosure | HSOF | |
| max. Voltage | 30 V | |
| Max. current | 300 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Power loss | 300 W |
Download
Logistics
| Customs tariff number | 85412900 |
| MSL | MSL 1 |
| Original Packaging | Reel with 2,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
