AOS18 | Fischer Elektronik
Aluminium oxide wafer for semiconductors
Unit Price (€ / pc.)
0.6426 € *
Available: 0 pcs.
Leadtime: 1 Week **
Aluminum oxide wafers for semiconductors, type Fischer AOS.
Made of AL 2-03 ceramic; Dielectric strength: 10 kV/mK. Thermal resistance: 0.3 K/W.
Design 2, type AOS.
Type: AOS 18, D 8.0 mm, thickness 1.5 mm
Technical specifications
| Version | aluminium oxide wafer | |
| Thickness | 1.5 mm | |
| diameter | 8 mm | |
| Dielectric strength | 10000 V/mm | |
| Suitable for | TO-18 | |
| Material | Al2O3 ceramic |
Download
Logistics
| Country of origin | CH |
| Customs tariff number | 85462000 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
