Aluminum oxide wafers for semiconductors, type Fischer AOS.
Made of AL 2-03 ceramic; Dielectric strength: 10 kV/mK. Thermal resistance: 0.3 K/W.
Type: AOS 3 P-SL, 20.5 x 17.5 mm, thickness 1.5 mm
Version | aluminium oxide wafer | |
Width | 17.5 mm | |
Thickness | 1.5 mm | |
Dielectric strength | 10000 V/mm | |
Suitable for | TO-3 | |
Length | 20.5 mm | |
Material | Al2O3 ceramic |
Country of origin | CH |
Customs tariff number | 85462000 |
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |
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