The IRF3808PBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The design is an extremely efficient and reliable for use in a wide variety of applications.
Features
Applications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 7 mΩ | |
Gate Charge Qg @10V (nC) | 1.5x10<sup>-7</sup> C | |
Enclosure | TO-220 | |
max. Voltage | 75 V | |
Max. current | 140 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -40 °C | |
Assembly | THT | |
Power loss | 330 W |
Country of origin | PH |
Customs tariff number | 85412900 |
Original Packaging | Bar with 202 pieces |
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |
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