SIR870ADP-T1-GE3 | Vishay

Name: Vishay N channel TrenchFET power MOSFET, 100 V, 60 A, SOIC-8, SIR870ADP-T1-GE3
Brand: Vishay
SKU: 24S8214
Price: 1.79 EUR
Availability: OutOfStock

Vishay N channel TrenchFET power MOSFET, 100 V, 60 A, SOIC-8, SIR870ADP-T1-GE3

Order No.: 24S8214

EAN: 4099879033673

MPN:

SIR870ADP-T1-GE3

Series: SI

Image may differ

Key Specification:

Version N channel

max. Voltage 100 V

Max. current 60 A

drain-source on resistance RDS (on) max @VGS=10V 6.3 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

1.7850 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

1.79 € *

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Description

N-channel MOSFETs, type Vishay Siliconix Si.

Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiR870ADP, 100 V, 6.6 mohm, 60 A, 25.5 nC, PowerPAK SO-8

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	6.3 mΩ
	Gate Charge Qg @10V (nC)	8x10<sup>-8</sup> C
	Enclosure	SOIC-8
	max. Voltage	100 V
	Max. current	60 A
	max. operating temperature	150 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	Power loss	104 W