IRF520NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 9.7 A, TO-220, IRF520NPBF
Unit Price (€ / pc.)
1.0353 € *
Available: 1,250 pcs.
Available in 5 Days: 2,050 pcs.
Leadtime: 1 Week **
Total Price:
1.04 € *
Price list
Quantity
Price per unit*
1 pcs.
1.0353 €
10 pcs.
0.7378 €
100 pcs.
0.6307 €
500 pcs.
0.5355 €
1000 pcs.
0.4879 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRF520NPBF, Infineon Technologies
The IRF520NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 200 mΩ | |
| Gate Charge Qg @10V (nC) | 2.5x10<sup>-8</sup> C | |
| Enclosure | TO-220 | |
| max. Voltage | 100 V | |
| Max. current | 9.7 A | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Power loss | 48 W |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 50 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
