ISP452HUMA1 | Infineon Technologies
Infineon Technologies N channel smart power high side switch, 34 V, 1.5 A, SOT-223, ISP452HUMA1
Unit Price (€ / pc.)
1.7969 € *
Available: 6,688 pcs.
Leadtime: On Request **
Total Price:
1.80 € *
Price list
Quantity
Price per unit*
1 pcs.
1.7969 €
100 pcs.
1.5946 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, ISP452HUMA1, Infineon Technologies
The ISP452HUMA1 is a N channel vertical power FET with charge pump with ground referenced CMOS compatible input and also it is monolithically integrated in Smart SIPMOS technology.
Features
- Short-circuit protection
- Input protection
- Overtemperature protection with hysteresis
- Overload protection
- Overvoltage protection
- Clamp of negative output voltage with inductive loads
- Maximum current internally limited
- ESD protected
- Reverse battery protection
Applications
- Compatible power switch for 12 V DC grounded loads for industrial applications
- All types of resistive, inductive and capacitive loads
- Replaces electromechanical relays and discrete circuits
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 160 mΩ | |
| Enclosure | SOT-223 | |
| max. Voltage | 34 V | |
| Max. current | 1.5 A | |
| max. operating temperature | 85 °C | |
| min. operating temperature | -30 °C | |
| Assembly | SMD | |
| Power loss | 1.8 W |
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Logistics
| Country of origin | AT |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 1 piece |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
