Changes in the electric resistance of a ferromagnetic object moving through a magnetic field can be detected by a magnetoresistive sensor. Sensors of this type are still relatively new. The type first became possible in the 1980s with the rise of thin-film technology. The previous application areas of magnetic field measurement, electronic compass, angular and path measurement, and potential-free current measurement are steadily expanding. Their advantage over Hall-effect sensors is their greater sensitivity; a wider air gap and smaller magnetic fields are available, as is lower current consumption. Our magneto-resistive sensors are produced by the primary developer, Honeywell and constructed in the form of a Wheatstone bridge. Extensive information on these components can be found on the product type datasheets.